Abstract
Open circuit transient photovoltage (TPV) decay measurements have been carried out on HgCdTe-based infrared photodiode at different bias-light power illumination. By employing a picosecond pulsed laser excitation with wavelength of \(4.5\,\upmu \hbox {m}\) on steady background illumination, the TPV decay varying behavior has been observed. The effect of junction capacitance and carrier traps on TPV decay can be decreased to the minimum saturation values by increasing the bias illumination level. The study indicates the TPV decay time constants are dominated by the discharging of junction capacitance, trap emission and photocarrier recombination. The minority carrier lifetime are affected by the carrier injection level.
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This work was supported by the National Natural Science Foundation of China (61107081, 61202369), Innovation Program of Shanghai Municipal Education Commission of China (12ZZ176).
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Cui, H., Xu, Y., Gao, W. et al. Influence of trap filling and junction capacitance charging on photovoltage transients in HgCdTe-based infrared photodiode. Opt Quant Electron 46, 1049–1054 (2014). https://doi.org/10.1007/s11082-013-9819-5
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DOI: https://doi.org/10.1007/s11082-013-9819-5