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Electrodeposition of Mo-Se thin films from a sulfamatic electrolyte

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Abstract

Mo-Se thin films have been electrodeposited on conducting tin oxide (SnO2) coated glass substrates from a sulfamatic solution containing Na2MoO4 and H2SeO3 under potentiostatic conditions. The deposition potential varied from −0.6 V to −0.9 V, at a deposition temperature of 20–40 °C and pH 6.5. X-ray diffraction analysis revealed that the overall composition of the films deposited is consistent with the formation of MoO2 and MoSe2. The lattice parameters of the “as-deposited” MoSe2 are a=b=3.2340 Å and c=13.2859 Å, which fits a hexagonal structure.

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Authors and Affiliations

  1. Department of Physical Chemistry, Kaunas University of Technology, Radvilienu pl. 19, 3028 , Kaunas, Lithuania

    Nijole Dukstiene & Kiril Kazancev

  2. Institute of Physical Electronics, Kaunas University of Technology, Savanoriu pr. 271, 3009 , Kaunas, Lithuania

    Igoris Prosicevas & Asta Guobiene

Authors
  1. Nijole Dukstiene
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  2. Kiril Kazancev
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  3. Igoris Prosicevas
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  4. Asta Guobiene
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Correspondence to Nijole Dukstiene.

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Dukstiene, N., Kazancev, K., Prosicevas, I. et al. Electrodeposition of Mo-Se thin films from a sulfamatic electrolyte. J Solid State Electrochem 8, 330–336 (2004). https://doi.org/10.1007/s10008-003-0457-x

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  • DOI: https://doi.org/10.1007/s10008-003-0457-x

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