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Charge carrier modulation in dual-gated graphene field effect transistor using honey as polar organic gate dielectric

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Abstract

Charge carrier modulation of graphene-based field effect transistors (GFETs) is the key factor to utilize and enhance its fascinating properties for technological applicability. Here, we have demonstrated the gate-dependent tweaking of electrical properties of graphene devices by application of honey as a top gate dielectric. Electrical characterization of dual-gated GFET is elucidated at different top and back-gate voltages. A charge neutrality point is fine-tuned by varying the top gate voltage (Vtg) from + 3 to − 4 V. The change in carrier density is clearly observed from 3.66 × 1012 to 2.15 × 1011 cm−2 at + 3 to − 4 Vtg. The charge carrier mobility of gel-gated GFET is increased significantly to 5376 cm2/V ⋅ sec by increasing top-gate voltages up to − 4 V. Result demonstrates a cost-effective, facile and rapid fabrication of top-gated devices and suggest natural dielectric materials as good candidate to replace conventionally available gate dielectrics in FET technology.

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Acknowledgements

The authors extend their appreciation to the Deanship of Scientific Research at Jouf University for funding this work through research Grant No. (DSR-2021-03-0110).

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Authors and Affiliations

  1. Department of Physics, College of Sciences, Jouf University, P.O. Box 2014, Sakaka, Saudi Arabia

    Meshal Alzaid, C. Bilel, W. S. Mohamed, N. M. A. Hadia & Fai Alsalh

  2. Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Khyber Pakhtunkhwa, Topi, 23640, Pakistan

    Muhammad Zahir Iqbal, Syed Shabhi Haider, Sana Zakar & Sana Khan

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  1. Meshal Alzaid
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  2. Muhammad Zahir Iqbal
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Alzaid, M., Iqbal, M.Z., Haider, S.S. et al. Charge carrier modulation in dual-gated graphene field effect transistor using honey as polar organic gate dielectric. Appl. Phys. A 127, 438 (2021). https://doi.org/10.1007/s00339-021-04581-y

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