Abstract
Porous silicon (PS) has been prepared in the dark by anodic etching of n+-type (111) silicon substrate in a HF:HCl:C2H5OH:H2O2:H2O electrolyte. The processed PS layer is characterized by means of photoluminescence (PL) spectroscopy, scanning electron microscope (SEM), water contact angle (CA) measurements, Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and micro-Raman scattering. The CA of fresh PS layer is found to be ~142°. On aging at ambient conditions, the CA decreases gently to reach ~133° after 3 month, and then it is stabilized for a prolonged time of aging. The visible PL emission from the PS layer also exhibits a good stability against aging time. The FTIR and XPS measurements and analysis show that the stable aged PS layer has rather SiO2-rich surface. The micro/nanostructure nature of the PS layer is revealed from SEM and micro-Raman results and correlated to CA results. Stable hydrophobic surface of oxidized PS layer is attractive for bio-applications. The efficiency of the produced PS layers as an entrapping template for specific immobilization of IgG2a antibody via physical absorption process is demonstrated.
Similar content being viewed by others
References
L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990)
P. McCord, S.L. Yau, A.J. Bard, Science 257, 68 (1992)
M. Archer, Sens. Actuators B 106, 347 (2005)
V.S.-Y. Lin, K. Motesharei, K.-P.S. Dancil, M.J. Sailor, M.R. Ghadiri, Science 278, 840 (1997)
L. Brus, J. Phys. Chem. 98, 3575 (1994)
K.D. Hirschman, L. Tsybeskov, S.P. Duttagupta, F.M. Fauchet, Nature 384, 338 (1996)
J. Wei, J.M. Buriak, G. Siuzdak, Nature 399, 243 (1999)
M.P. Stewart, J.M. Buriak, Adv. Mater. 12, 859 (2000)
H. Föll, M. Christophereson, I. Carstensen, G. Hasse, Mater. Sci. Eng. R 280, 1 (2002)
E.C. Wu, J.S. Andrew, L. Cheng, W.R. Freeman, L. Pearson, M.J. Sailor, Biomaterials 32, 1957 (2011)
S.P. Low, N.H. Voelcker, L.T. Canham, K.A. Williams, Biomaterials 30, 2873 (2009)
A. Jane, R. Dronov, A. Hodges, N.H. Voelcker, Trends Biotechnol. 27, 230 (2009)
C. Mazzoleni, L. Pavesi, Appl. Phys. Lett. 67, 2983 (1995)
L. Canham, in Properties of porous silicon, in EMIS Data reviews, vol. 18, ed. by B.L. Weiss (Institution of engineering and technology, London, 1997)
S. Boughaba, K. Wang, Thin Solid Films 497, 83 (2006)
V. Chamard, G. Dolino, J. Appl. Phys. 89, 174 (2001)
R.R. Koropecki, R.D. Arce, A.M. Gennaro, C. Spies, J.A. Schmidt, J. Non Cryst. Solids 352, 1163 (2006)
M. Naddaf, H. Hamadeh, Mater. Sci. Eng. C 29, 2092 (2009)
A.I. Belogorokhov, R. Enderlein, A. Tabata, V.A. Karavanskii, L.I. Belogorokhova, Phys. Rev. B 56, 10276 (1997)
A.I. Belogorokhov, L.I. Belogorokhova, Semiconductors 33, 169 (1999)
S.A. Gavrilov, A.I. Belogorokhov, L.I. Belogorokhova, Semiconductors 36, 98 (2002)
Z. Yamani, W.H. Thompson, L. AbuHassan, M.H. Nayfen, Appl. Phys. Lett. 70, 3404 (1997)
V. Lehmann, R. Stengl, A. Luigart, Mater. Sci. Eng. B 69(70), 11 (2000)
T.V. Voloshina, T.N. Zavaritskaya, I.V. Kavetskaya, V.A. Karavanskii, D.A. Romashov, J. Appl. Spectrosc. 69, 275 (2002)
P. Allongue, J. Electrochem. Soc. 140, 1018 (1993)
A. Janshoff, K.-P. S. Dancil, C. Steinem, D.P. Greiner, V.S.-Y. Lin, C. Gurtner, K. Motesharei, M.J. Sailor, M.R. Ghadiri, J. Am. Chem. Soc. 120, 12108 (1998)
J.M. Buriak, M.P. Stewart, T.W. Geders, M.J. Allen, H.C. Choi, J. Smith, D. Raftery, L.T. Canham, J. Am. Chem. Soc. 121, 11491 (1999)
M. Naddaf, F. Awad, M. Soukeih, Mater. Sci. Eng. C 27, 832 (2007)
Xiao-yuan Hou, Hong-lei Fan, Xu Lei, Fu-long Zhang, Min-qian Li, Yu. Ming-ren, Xun Wang, Appl. Phys. Lett. 68, 2323 (1996)
G.G. Qin, H.Z. Song, B.R. Zhang, J. Lin, J.Q. Duan, G.Q. Yao, Phys. Rev. B 54, 2548 (1996)
E.A. Petrova, K.N. Bogoslovskaya, L.A. Balagurov, G.I. Kochoradze, Mater. Sci. Eng. B 69, 152 (2000)
A.H. Ellison, W.A. Ziman, J. Phys. Chem. 58, 260 (1954)
M. Ma, R.M. Hill, Curr. Opin. Colloid Interface Sci. 11, 193 (2006)
S. Ossicini, L. Pavesi, F. Priolo, Light Emitting Silicon for Microphotonics, vol. 194 (Springer, Berlin, 2003)
P. Gupta, V.L. Colvin, S.M. George, Phys. Rev. B 37, 8234 (1988)
A. Borghesi, A. Sassella, B. Pivac, L. Pavesi, Solid State Commun. 87, 1 (1993)
F.G. Bell, L. Ley, Phys. Rev. B 37, 8383 (1988)
C.D. Wagner, W.M. Riggs, W.E. Davis, J.F. Moulder, G.E. Muilenberg (eds.), Handbook of X-ray Photoelectron Spectroscopy: a Reference Book of Standard Data for Use in X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Physical Electronics Division, Eden Prairie, 1979)
S.R. Das, J.B. Webb, S.C. de Castro, V.S. Sundaram, J. Appl. Phys. 60, 2530 (1986)
R. Tubino, L. Piseri, G. Zerbi, J. Chem. Phys. 56, 1022 (1972)
Md.N. Islam, S. Kumar, Appl. Phys. Lett. 78, 715 (2001)
D.E. Milovzorov, Nonlinear optoelectronic devices based on nanocrystalline silicon films: acoustoelectrical switches for optical modes, nonlinear optical switches and lasers, in Nanocrystal, ed. by Y. Masuda, InTech, (2011) available from; http://www.intechopen.com/books/nanocrystal/nonlinear-optoelectronic-devices-based-onnanocrystallinesilicon-films-acoustoelectrical-switches-f
H. Richter, Z.P. Wang, L. Ley, Solid State Commun. 39, 62 (1981)
P.A. Temple, C.E. Hathaway, Phys. Rev. B 7, 3685 (1973)
H.D. Fuchs, M. Stutzmann, M.S. Brandt, M. Rosenbauer, J. Weber, A. Breitschwerdt, P. Deak, M. Cardona, Phys. Rev. B 48, 8172 (1993)
J.Y. Yoon, R.L. Garrell, Anal. Chem. 75, 5097 (2003)
F.A. Denis, P. Hanarp, D.S. Sutherland, J. Gold, C. Mustin, P.G. Rouxhet, Y.P. Dufrêne, Langmuir 18, 819 (2002)
K. Nakanishi, T. Sakiyama, Y. Kumada, K. Imamura, H. Imanaka, Curr. Proteomics 5, 161 (2008)
S. Libertino, V. Aiello, A. Scandurra, M. Renis, F. Sinatra, Sensors 8, 5637 (2008)
M. Naddaf, A. Al-Mariri, Sens. Actuators B 160, 835 (2011)
M. Yoshinari, T. Huyakawa, K. Matsuzaka, T. Inoue, Y. Oda, M. Shimono, T. Ide, T. Tanaka, Biomed. Res. 27, 29 (2006)
I. Notingher, L.L. Hench, Expert Rev. Med. Devices 3, 215 (2006)
Acknowledgments
The authors would like to thank the Director General of AECS, Professor I Othman for encouragement and support.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Naddaf, M., Almariri, A. Characterization of hydrophobic, oxidized porous silicon layer formed by anodic etching of n+-type silicon surface in a HF:C2H5OH:HCl:H2O2:H2O electrolyte for bio-application. Appl. Phys. A 116, 1337–1345 (2014). https://doi.org/10.1007/s00339-014-8230-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-014-8230-9