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One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography

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Abstract

We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir–Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on both top and bottom electrodes. Read, write, erase and cross talking were also investigated.

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Authors and Affiliations

  1. Quantum Science Research, HP Labs, Hewlett-Packard Company, Palo Alto, CA, 94304, USA

    W. Wu, G.-Y. Jung, J. Straznicky, Z. Li, X. Li, D.A.A. Ohlberg, S.-Y. Wang, W.M. Tong & R. Stanley Williams

  2. Lawrence Berkeley National Lab, 1 Cyclotron Road, M/S 2-400, Berkeley, CA, 94720, USA

    D.L. Olynick & J.A. Liddle

  3. School of Engineering and Applied Science, University of California, Los Angeles, CA, 90095-1597, USA

    Y. Chen

  4. Technology Development Operations, InkJet Printing Group, Hewlett-Packard Company, 1000 Circle Boulevard, Corvallis, OR, 97330, USA

    W.M. Tong

Authors
  1. W. Wu
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  2. G.-Y. Jung
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  3. D.L. Olynick
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  4. J. Straznicky
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  5. Z. Li
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  6. X. Li
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  7. D.A.A. Ohlberg
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  8. Y. Chen
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  9. S.-Y. Wang
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  10. J.A. Liddle
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  11. W.M. Tong
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  12. R. Stanley Williams
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Corresponding author

Correspondence to W. Wu.

Additional information

PACS

85.40.Hp; 81.07.-b; 81.16.Nd; 85.65.+h

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Wu, W., Jung, GY., Olynick, D. et al. One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography. Appl. Phys. A 80, 1173–1178 (2005). https://doi.org/10.1007/s00339-004-3176-y

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  • DOI: https://doi.org/10.1007/s00339-004-3176-y

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