Abstract
The electrical properties of devices made of doped 3-tetradecylpolypyrrole (PPy-C14) thin films sandwiched between indium-tin-oxyde (ITO) and gold metal electrodes are reported. The current density–voltage (J–V) curves are asymmetric and nonlinear implying a non Ohmic rectifying contact. Using standard thermionic emission theory (Schottky) J–V characteristics were satisfactorily fitted with a saturation current of J0=1.5×10-5 A cm-2, a barrier height of ϕb=0.7 eV, and an ideality factor of n=5.3. Characteristics from the plot of J–V versus 1/T show that the activation energy of the thermionic emission process is higher below the glass transition temperature of PPy-C14 (Tg=45 °C) than above, which seems to indicate that the hopping conduction process is enhanced at T>Tg. The carrier concentration has been calculated from capacitance–voltage (C-V) measurements (N=1.9×1017 cm-3) allowing estimation of the carrier mobility μ=2.6×10-2 cm2 V-1 s-1.
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73.61.Ph; 73.40.Sx; 73.30.+y
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Boussoualem, M., King, R., Buisine, J. et al. Electrical properties of doped 3-tetradecylpolypyrrole/metal devices. Appl. Phys. A 81, 773–777 (2005). https://doi.org/10.1007/s00339-004-2743-6
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DOI: https://doi.org/10.1007/s00339-004-2743-6