Abstract
Since the last 30 years, incredible amount of research has been performed toward finding novel, smart, and cost-effective materials for device applications. Carbon among other materials is one of the most versatile elements present in nature that can produce different allotropes due to the existence of its variable hybridizations. Moreover, graphene is being considered as the mother of other carbon allotropes as they are the structurally derived allotropes of different dimensionalities such as fullerene, graphene quantum dots (0-D), carbon nanotubes, nanohorns, nanofibers, graphene nanoribbon (1-D), graphene (2-D), graphite and diamond (3-D) and are being implemented for various device applications. The synthesis methodologies of these allotropes including arc discharge, laser ablation, and chemical vapor deposition (CVD) techniques are discussed in this chapter to produce 0-D, 1-D, and 2-D carbon allotropes. CVD is considered as the most reliable technique for bulk production of highly crystalline graphene and its derivatives, single-crystalline diamonds, CNTs, and aligned CNTs on certain pre-treated substrates which are beneficial for device applications. Further, solid-state synthesis approaches such as ball milling and annealing have been adopted to generate CNTs, while graphene and offshoots have been synthesized by employing wet milling, top-down, and bottom-up processes. Also, it is noteworthy to mention that the bottom-up processes have been proven to be more effective compared to the top-down approaches for device fabrications. Furthermore, allotropes of carbon are known to be functionalized with metal-based nanoparticles, biomolecules, etc. to generate smart materials in order to obtain high-performance devices.
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Selvam, A., Sharma, R., Sutradhar, S., Chakrabarti, S. (2021). Synthesis of Carbon Allotropes in Nanoscale Regime. In: Hazra, A., Goswami, R. (eds) Carbon Nanomaterial Electronics: Devices and Applications. Advances in Sustainability Science and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-16-1052-3_2
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