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Reduced Graphene Oxide Photodetector Devices for Infra-Red Sensing

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Carbon Nanomaterial Electronics: Devices and Applications

Part of the book series: Advances in Sustainability Science and Technology ((ASST))

Abstract

Infra-Red (IR) radiation is the thermal radiation which is characterized by the temperature of the emitting source. Hence, IR photodetectors could be used for a number of applications such as surveillance in defence, non-contact thermometry, non-contact human access control, bolometers and terahertz, etc. Infra-Red spans over a vast range of wavelengths, i.e. from 1 μm to several tens of μm. While there are several materials used for sensing the IR radiation, broadly the underlying physical principles of IR detections could be classified into three distinct categories i.e. photothermoelectrics, photovoltaics and photogating. The heating effect of IR radiation brings about the thermopower considerations in case of non-uniform illumination or inhomogeneity of the sample leading to photothermoelectric effect. While, in case photovoltaics, the generation of photocurrent as a result of exitonic contribution modulates the conductivity of the device. However, in photogating, the Fermi energy of the sensor material is controlled through optical illuminations. In this chapter, we restrict ourselves to photovoltaic and photothermoelectrics in case of reduced graphene oxide and its composites. Graphene and its derivatives, such as graphene oxide, graphene nanoribbons, graphene quantum dots, etc., have revealed a wide range of novel physical properties and led to a spectrum of functional devices. Because of its small yet tunable bandgap through controlled reduction, graphene oxide is a potential choice for IR detection devices. Here in this chapter, we discuss its physical attributes which could be utilized for IR detection.

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Notes

  1. 1.

    Some of the researchers also found the response for shorter wavelengths of near IR and part of visible spectrum as shown in Fig. 5. However, we restrict ourselves to IR region only for the scope of this chapter.

  2. 2.

    The bolometric response depends on the Temperature Coefficient of Resistance (TCR) and TCR is positive in metals. Hence the rise in temperature causes rise in resistance of bolometer.

  3. 3.

    Reproduced under Creative Commons Attribution 4.0 International License.

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Acknowledgements

The authors are thankful to the inspire grant (Number DST/INSPIRE/04/2015/002111) of Dr. Vinayak Kamble for the funding support and supporting the fellowship of Dr. Appu V R.

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Kamble, V., Biswas, S., Appu, V.R., Kumar, A. (2021). Reduced Graphene Oxide Photodetector Devices for Infra-Red Sensing. In: Hazra, A., Goswami, R. (eds) Carbon Nanomaterial Electronics: Devices and Applications. Advances in Sustainability Science and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-16-1052-3_14

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