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Highly-Efficient InAs Nanowire Phototransistors

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Infrared Photodetectors Based on Low-Dimensional Materials

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Abstract

This chapter describes an anomalous, high-gain and broadband photoresponse in InAs nanowire phototransistors. Photogating layer formed at the surface of InAs nanowires traps photocarriers, leading to a local electric field to modulate the conductance of nanowires. The strength and polarity of photogate will be studied by applying different back-gate voltages.

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Authors and Affiliations

  1. Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing, China

    Nan Guo

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  1. Nan Guo
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Correspondence to Nan Guo .

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Guo, N. (2018). Highly-Efficient InAs Nanowire Phototransistors. In: Infrared Photodetectors Based on Low-Dimensional Materials. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-13-2838-1_3

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