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Tin Oxide-Silicon Dioxide-Silicon MIS Solar Cells

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Photovoltaic Solar Energy Conference

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Summary

This communication presents the results obtained in tin oxide-silicon dioxide-n type silicon schottky barrier solar cells. Samples were prepared in a two-zone furnace where the thermal oxidation of the wafer and the SnO2 deposition were carried out without further handling. The tin oxide layer was grown using a gas transport method in an open tube. The characteristic parameters of the solar cell performance gave the following results: short circuit current density = 21 mA/cm2, open circuit voltage = 550 mV.

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References

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Author information

Authors and Affiliations

  1. Solid State Physics Institute C.S.I.C., Canto Blanco, Madrid 34, Spain

    J. Llabres

  2. Laboratory of Microelectronics, CENFA-C.S.I.C., Madrid 6, Spain

    E. Domincuez & E. Lora-Tamayo

  3. Applied Physics Department, U.A.M., Canto Blanco, Madrid 34, Spain

    F. Arjøna

Authors
  1. J. Llabres
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  2. E. Domincuez
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  3. E. Lora-Tamayo
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  4. F. Arjøna
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Editor information

Editors and Affiliations

  1. Commission of the European Communities, Belgium

    W. Palz (Conference Chairman) (Conference Chairman)

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© 1981 ECSC, EEC, EAEC, Brussels and Luxembourg

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Llabres, J., Domincuez, E., Lora-Tamayo, E., Arjøna, F. (1981). Tin Oxide-Silicon Dioxide-Silicon MIS Solar Cells. In: Palz, W. (eds) Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-8423-3_140

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  • DOI: https://doi.org/10.1007/978-94-009-8423-3_140

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-009-8425-7

  • Online ISBN: 978-94-009-8423-3

  • eBook Packages: Springer Book Archive

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