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Formation of SiC for Microelectronic Applications by C Implantation into Doped a-Si

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Amorphous and Crystalline Silicon Carbide IV

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 71))

Abstract

Heterojunction diodes have been formed by high-dose C implantation into thin n+ amorphous Si layers deposited on lightly-doped p-type Si substrates. FTIR and ellipsometry both indicate the conversion of the implanted layer to SiC following rapid thermal annealing at or above 1050°C. Resistivities as low as 300 mΩcm were obtained after RTA for SiC films over oxide. Diode J-V characteristics suggest the presence of a large depletion region recombination current component.

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Author information

Authors and Affiliations

  1. Department of Electronics, Carleton University, Ottawa, Canada, K1S 5B6

    B. M. Manning, S. B. Hewitt & N. G. Tarr

  2. Northern Telecom Electronics Ltd., Ottawa, Canada, K1Y 4H2

    T. W. MacElwee

Authors
  1. B. M. Manning
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  2. S. B. Hewitt
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  3. N. G. Tarr
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  4. T. W. MacElwee
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, 95053, Santa Clara, CA, USA

    Cary Y. Yang  & M. Mahmudur Rahman  & 

  2. School of Engineering, Howard University, 20059, Washington, DC, USA

    Gary L. Harris

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© 1992 Springer-Verlag Berlin Heidelberg

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Manning, B.M., Hewitt, S.B., Tarr, N.G., MacElwee, T.W. (1992). Formation of SiC for Microelectronic Applications by C Implantation into Doped a-Si. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_37

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  • DOI: https://doi.org/10.1007/978-3-642-84804-9_37

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84806-3

  • Online ISBN: 978-3-642-84804-9

  • eBook Packages: Springer Book Archive

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