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Atomic Structure of SiC Surfaces

  • Chapter
Silicon Carbide

Part of the book series: Advanced Texts in Physics ((ADTP))

Abstract

With its specific physical properties silicon carbide promises to allow the development of electronic devices that can not be made from silicon or III–V compound semiconductors. This is in several aspects due to the superior electronic parameters of SiC compared to those materials and promises to facilitate high power, high frequency and high temperature device applications. Considerable effort has been seen in recent years to improve the material properties of SiC wafers for an industrial device production. However, the quality of substrate material available is still by far below that of common silicon wafers and crystals. A high defect density, grain boundaries, large voids in the material which develop around screw dislocations — so-called micropipes — are defects that are still difficult to control in the industrial production of crystalline SiC material suitable for a commercial utilization of its promising properties.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Grenzflächenanalytik, Heisenbergstr. 1, 70569, Stuttgart, Germany

    U. Starke

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  1. U. Starke
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Editors and Affiliations

  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

  2. Department of Electronic Science and Engineering Yoshidahonmachi, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    H. Matsunami

  3. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7/A3, 91058, Erlangen, Germany

    G. Pensl

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Starke, U. (2004). Atomic Structure of SiC Surfaces. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_12

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  • DOI: https://doi.org/10.1007/978-3-642-18870-1_12

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