Skip to main content
SpringerLink
Log in

Transistor Scaling to the Limit

  • Chapter
Into the Nano Era

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 106))

Abstract

The steady miniaturization of the metal-oxide-semiconductor field-effect transistor (MOSFET) with each new generation of complementary-MOS (CMOS) technology has yielded continual improvements in integrated-circuit performance and cost per function for more than 40 years. Until recently, transistor scaling generally followed simple rules [1] with slight modification (Table 8.1) [2, 3] to provide for improvements in circuit speed and density with reduction in power consumption per function, while maintaining reliability and electrostatic integrity (gate voltage control of the source-to-channel potential barrier) of the device itself. As a result, MOSFET scaling was able to progress at an exponential rate [4], yielding commensurate improvements in integration, cost, and performance, with revolutionary impact to usher in the Information Age.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. R.H. Dennard et al., IEEE J. Solid-State Circuits 9, 256 (1974)

    Article  Google Scholar 

  2. G. Baccarani et al., IEEE Trans. Electron Devices 31, 452 (1984)

    Article  Google Scholar 

  3. B. Davari et al., Proc. IEEE 83, 595 (1995)

    Article  Google Scholar 

  4. G.E. Moore, in Int’l Electron Devices Meeting Technical Digest, 1975, p. 11

    Google Scholar 

  5. E.J. Nowak, IBM J. Res. Develop. 46, 169 (2002)

    Article  Google Scholar 

  6. S.-W. Sun, P.G.Y. Tsui, IEEE J. Solid-State Circuits 30, 947 (1995)

    Article  Google Scholar 

  7. P. Bai et al., in Int’l Electron Devices Meeting Technical Digest, 2004, p. 657

    Google Scholar 

  8. J.W. Sleight et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 697

    Google Scholar 

  9. H. Masuda et al., in Custom Integrated Circuits Conf., 2005, p. 593

    Google Scholar 

  10. D.J. Frank et al., Proc. IEEE 89, 259 (2001)

    Article  CAS  Google Scholar 

  11. R. Chau et al., in Int’l Electron Devices Meeting Technical Digest, 2000, p. 45

    Google Scholar 

  12. B. Yu et al., in Symp. VLSI Technology Digest, 2001, p. 9

    Google Scholar 

  13. E. Morifuji et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 655

    Google Scholar 

  14. N. Yasutake et al., in Symp. VLSI Technology Digest, 2004, p. 84

    Google Scholar 

  15. K. Goto et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 623

    Google Scholar 

  16. Int’l technology roadmap for semiconductors, 2005. http://www.itrs.net/Links/ 2005ITRS/Home2005.htm

    Google Scholar 

  17. J.R. Brews et al., IEEE Electron Device Lett. 1, 2 (1980)

    Article  Google Scholar 

  18. Z.-H. Liu et al., IEEE Trans. Electron Devices 40, 86 (1993)

    Article  ADS  Google Scholar 

  19. Y. Taur et al., in Int’l Electron Devices Meeting Technical Digest, 1998, p. 789

    Google Scholar 

  20. S. Takagi et al., IEEE Trans. Electron Devices 41, 2357 (1994)

    Article  ADS  CAS  Google Scholar 

  21. D. Antoniadis, in Symp. VLSI Technology Digest, 2002, p. 2

    Google Scholar 

  22. R.W. Keyes, IEEE J. Solid-State Circuits 10, 245 (1975)

    Article  Google Scholar 

  23. A. Asenov, in Symp. VLSI Technology Digest, 2007, p. 86

    Google Scholar 

  24. K. Takeuchi et al., in Int’l Electron Devices Meeting Technical Digest, 1997, p. 841

    Google Scholar 

  25. A. Aeenov, S. Saini, IEEE Trans. Electron Devices 46, 1718 (1999)

    Article  ADS  Google Scholar 

  26. A. Hori et al., in Int’l Electron Devices Meeting Technical Digest, 1993, p. 909

    Google Scholar 

  27. K. Noda et al., in Symp. VLSI Technology Digest, 1994, p. 20

    Google Scholar 

  28. K. Noda et al., IEEE Trans. Electron Devices 45, 809 (1998)

    Article  ADS  CAS  Google Scholar 

  29. T. Ohguro et al., in Int’l Electron Devices Meeting Technical Digest, 1998, p. 927

    Google Scholar 

  30. S. Song et al., in Symp. VLSI Technology Digest, 2000, p. 190

    Google Scholar 

  31. S. Song et al., in Int’l Electron Devices Meeting Technical Digest, 2000, p. 235

    Google Scholar 

  32. R.-H. Yan et al., IEEE Trans. Electron Devices 39, 1704 (1992)

    Article  ADS  CAS  Google Scholar 

  33. A. Hokazono et al., IEEE Trans. Electron Devices 54 (2007)

    Google Scholar 

  34. D.C. Jacobson et al., in Int’l Conf. on Ion Implantation Technology, 2000, p. 300

    Google Scholar 

  35. N.W. Cheung et al., Mater. Res. Soc. Symp. Proc. 279, 297 (1993)

    CAS  Google Scholar 

  36. M. Takase et al., in Int’l Electron Devices Meeting Technical Digest, 1997, p. 475

    Google Scholar 

  37. A. Hori et al., in Int’l Electron Devices Meeting Technical Digest, 1999, p. 641

    Google Scholar 

  38. Y. Sasaki et al., in Symp. VLSI Technology Digest, 2004, p. 180

    Google Scholar 

  39. J. Hautala, J. Borland, in IEEE Int’l. Conf. on Advanced Thermal Processing of Semiconductors, 2004, p. 37

    Google Scholar 

  40. A. Jain, L. Robertson, in IEEE Int’l. Conf. on Advanced Thermal Processing of Semiconductors, 2002, p. 31

    Google Scholar 

  41. T. Ito et al., in Int’l Workshop on Junction Technology Extended Abstracts, 2002, p. 23

    Google Scholar 

  42. F. Ootsuka et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 647

    Google Scholar 

  43. S. Talwar et al., in Int’l Conf. on Ion Implantation Technology, 1998, p. 1171

    Google Scholar 

  44. B. Yu et al., in Int’l Electron Devices Meeting Technical Digest, 1999, p. 509

    Google Scholar 

  45. S.B. Felch et al., in Int’l Conf. on Ion Implantation Technology, 2000, p. 167

    Google Scholar 

  46. C. Park et al., in Symp. VLSI Technology Digest, 2001, p. 69

    Google Scholar 

  47. J.R. Pfiester et al., IEEE Electron Device Lett. 9, 343 (1988)

    Article  ADS  CAS  Google Scholar 

  48. H.-J. Li et al., IEEE Electron Device Lett. 23, 646 (2002)

    Article  ADS  CAS  Google Scholar 

  49. D.F. Downey et al., Appl. Phys. Lett. 73, 1263 (1998)

    Article  ADS  CAS  Google Scholar 

  50. L.S. Robertson et al., in Int’l Workshop on Junction Technology, 2001, p. 57

    Google Scholar 

  51. T. Shano et al., in Int’l Electron Devices Meeting Technical Digest, 2001, p. 821

    Google Scholar 

  52. S. Nishikawa et al., Appl. Phys. Lett. 60, 2270 (1992)

    Article  ADS  CAS  Google Scholar 

  53. M. Craig et al., in Int’l Conf. on Ion Implantation Technology, 1996, p. 665

    Google Scholar 

  54. V. Moroz et al., Appl. Phys. Lett. 87, 051908 (2005)

    Article  ADS  CAS  Google Scholar 

  55. E. Augendre et al., in European Solid-State Device Research Conf., 2006, p. 355

    Google Scholar 

  56. M. Takamiya et al., in Proc. Int’l Semiconductor Device Research Symp., 1997, p. 215

    Google Scholar 

  57. B. Yu et al., in Proc. International Semiconductor Device Research Symp., 1997, p. 623

    Google Scholar 

  58. Y.-K. Choi et al., in Int’l Electron Devices Meeting Technical Digest, 1999, p. 919

    Google Scholar 

  59. L. Chang et al., Proc. IEEE 91, 1860 (2003)

    Article  CAS  Google Scholar 

  60. Y. Omura et al., IEEE Electron Device Lett. 14, 569 (1993)

    Article  ADS  CAS  Google Scholar 

  61. Y.-K. Choi et al., in 59th Annual Device Research Conf. Digest, 2001, p. 85

    Google Scholar 

  62. J. Fossum et al., IEEE Trans. Electron Devices 50, 2095 (2003)

    Article  ADS  CAS  Google Scholar 

  63. V. Varadarajan et al., in Proc. IEEE Silicon Nanoelectronics Workshop, 2006, p. 137

    Google Scholar 

  64. D. Ha et al., in Int’l Conf. on Solid State Devices and Materials, 2002

    Google Scholar 

  65. Y.-K. Choi et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 259

    Google Scholar 

  66. P. Ranade et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 363

    Google Scholar 

  67. J. Kedzierski et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 247

    Google Scholar 

  68. V. Vidya, T.-J. King Liu, in 16th Biennial University Government Industry Microelectronics Symposium, 2006

    Google Scholar 

  69. V. Vidya, Ph.D. Thesis, University of California, Berkeley, 2007

    Google Scholar 

  70. L. Chang, Ph.D. Thesis, University of California, Berkeley, 2003

    Google Scholar 

  71. Y.-K. Choi et al., IEEE Electron Device Lett. 21, 254 (2000)

    Article  ADS  CAS  Google Scholar 

  72. K. Uchida et al., in Int’l Electron Devices Meeting Technical Digest, 2001, p. 633

    Google Scholar 

  73. Z. Ren et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 51

    Google Scholar 

  74. B. Doris et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 267

    Google Scholar 

  75. Y.-K. Choi et al., IEEE Electron Device Lett. 22, 447 (2001)

    Article  ADS  CAS  Google Scholar 

  76. J. Kedzierski et al., in Int’l Electron Devices Meeting Technical Digest, 2000, p. 57

    Google Scholar 

  77. D. Connelly et al., IEEE Electron Device Lett. 24, 411 (2003)

    Article  ADS  CAS  Google Scholar 

  78. S. Xiong et al., IEEE Trans. Electron Devices 52, 1859 (2005)

    Article  ADS  CAS  Google Scholar 

  79. M. Jurczak et al., IEEE Trans. Electron Devices 47, 2179 (2000)

    Article  ADS  CAS  Google Scholar 

  80. S. Takagi et al., in Int’l Electron Devices Meeting Technical Digest, 1997, p. 219

    Google Scholar 

  81. K. Uchida et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 47

    Google Scholar 

  82. K. Suzuki et al., IEEE Trans. Electron Devices 40, 2326 (1993)

    Article  ADS  CAS  Google Scholar 

  83. D.J. Frank et al., in Int’l Electron Devices Meeting Technical Digest, 1992, p. 553

    Google Scholar 

  84. T. Tanaka et al., IEEE Electron Device Lett. 15, 386 (1994)

    Article  ADS  CAS  Google Scholar 

  85. H.-S.P. Wong et al., in Int’l Electron Devices Meeting Technical Digest, 1997, p. 427

    Google Scholar 

  86. J.-H. Lee et al., in Int’l Electron Devices Meeting Technical Digest, 1999, p. 71

    Google Scholar 

  87. K.W. Guarini et al., in Int’l Electron Devices Meeting Technical Digest, 2001, p. 425

    Google Scholar 

  88. H.-S.P. Wong et al., Proc. IEEE 87, 537 (1999)

    Article  Google Scholar 

  89. J.M. Hergenrother et al., in Int’l Electron Devices Meeting Technical Digest, 1999, p. 75

    Google Scholar 

  90. Y.-K. Choi et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 259

    Google Scholar 

  91. Y.-K. Choi et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 177

    Google Scholar 

  92. W. Xiong et al., IEEE Electron Device Lett. 25, 541 (2004)

    Article  ADS  CAS  Google Scholar 

  93. D. Hisamoto et al., in Int’l Electron Devices Meeting Technical Digest, 1998, p. 1032

    Google Scholar 

  94. X. Huang et al., in Int’l Electron Devices Meeting Technical Digest, 1999, p. 67

    Google Scholar 

  95. N. Lindert et al., IEEE Electron Device Lett. 22, 487 (2001)

    Article  ADS  CAS  Google Scholar 

  96. B. Yu et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 251

    Google Scholar 

  97. F.-L. Yang et al., in Symp. VLSI Technology Digest, 2004, p. 196

    Google Scholar 

  98. H. Lee et al., in Symp. VLSI Technology Digest, 2006, p. 58

    Google Scholar 

  99. F.-L. Yang et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 255

    Google Scholar 

  100. T. Park et al., in Symp. VLSI Technology Digest, 2003, p. 135

    Google Scholar 

  101. J.G. Fossum et al., in Int’l Electron Devices Meeting Technical Digest, 2004, p. 613

    Google Scholar 

  102. K.G. Anil et al., in European Solid-State Device Research Conf., 2003, p. 139

    Google Scholar 

  103. Y.-K. Choi et al., IEEE Trans. Electron Devices 49, 436 (2002)

    Article  ADS  Google Scholar 

  104. D. Lenoble et al., in Symp. VLSI Technology Digest, 2006, p. 168

    Google Scholar 

  105. X. Wu et al., IEEE Trans. Electron Devices 52, 63 (2005)

    Article  ADS  Google Scholar 

  106. Y.-K. Choi et al., IEEE Electron Devices Lett. 23, 25 (2002)

    Article  ADS  CAS  Google Scholar 

  107. R. Rooyackers et al., in Int’l Electron Devices Meeting Technical Digest 2006, p. 993

    Google Scholar 

  108. G. Pei et al., IEEE Trans. Electron Devices 49, 1411 (2002)

    Article  ADS  Google Scholar 

  109. R. Chau et al., in Int’l Conf. Solid-State Materials and Devices, 2002, p. 68

    Google Scholar 

  110. J.-T. Park et al., IEEE Electron Devices Lett. 22, 405 (2001)

    Article  ADS  Google Scholar 

  111. J.-P. Coling et al., in Int’l Electron Devices Meeting Technical Digest, 1990, p. 595

    Google Scholar 

  112. E. Leobandung et al., J. Vac. Sci. Technol. B 15, 2791 (1997)

    Article  CAS  Google Scholar 

  113. S. Monfray et al., in Symp. VLSI Technology Digest, 2002, p. 108

    Google Scholar 

  114. C.P. Auth, J.D. Plummer, IEEE Electron Device Lett. 18, 74 (1997)

    Article  ADS  Google Scholar 

  115. N. Singh et al., IEEE Electron Device Lett. 27, 383 (2006)

    Article  ADS  CAS  Google Scholar 

  116. S.D. Suk et al., in Int’l Electron Devices Meeting Technical Digest, 2005, p. 717

    Google Scholar 

  117. K.H. Yeo et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 539

    Google Scholar 

  118. J. Kedzierski et al., IEEE Trans. Electron Devices 50, 952 (2003)

    Article  ADS  CAS  Google Scholar 

  119. H. Kam et al., in Proc. Silicon Nanoelectronics Workshop, 2004, p. 9

    Google Scholar 

  120. A. Dixit et al., IEEE Trans. Electron Devices 52, 1132 (2005)

    Article  ADS  CAS  Google Scholar 

  121. A. Dixit et al., in IEEE Int’l SOI Conference Digest, 2005, p. 226

    Google Scholar 

  122. H. Shang et al., in Symp. VLSI Technology Digest, 2006, p. 66

    Google Scholar 

  123. T. Park et al., in Symp. VLSI Technology Digest, 2003, p. 135

    Google Scholar 

  124. H. Kawasaki et al., in Symp. VLSI Technology Digest, 2006, p. 70

    Google Scholar 

  125. C.H. Lee et al., in Symp. VLSI Technology Digest, 2004, p. 130

    Google Scholar 

  126. A.J. Bhavnagarwala et al., IEEE J. Solid-State Circuits 36, 658 (2001)

    Article  Google Scholar 

  127. Z. Guo et al., in Int’l Symp. Low Power Electronics and Design., 2005, p. 2

    Google Scholar 

  128. C.-H. Lee et al., in IEEE Int’l Conf. Integrated Circuit and Technology, 2005, p. 37

    Google Scholar 

  129. D.-H. Lee et al., in Symp. VLSI Technology Digest, 2007, p. 164

    Google Scholar 

  130. K. Kim, in Int’l Electron Devices Meeting Technical Digest, 2005, p. 323

    Google Scholar 

  131. P. Xuan et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 609

    Google Scholar 

  132. C.W. Oh et al., in Int’l Electron Devices Meeting Technical Digest, 2004, p. 893

    Google Scholar 

  133. J.R. Hwang et al., in Int’l Electron Devices Meeting Technical Digest, 2005, p. 154

    Google Scholar 

  134. M. Specht et al., in Symp. VLSI Technology Digest, 2004, p. 244

    Google Scholar 

  135. M. Specht et al., in Int’l Electron Devices Meeting Technical Digest, 2004, p. 1083

    Google Scholar 

  136. J. Kedzierski et al., in Int’l Electron Devices Meeting Technical Digest, 2001, p. 437

    Google Scholar 

  137. T. Sato et al., Phys. Rev. B 4, 1950 (1971)

    Article  ADS  Google Scholar 

  138. S. Maeda et al., in IEEE Int’l Reliability Physics Symp., 2004, p. 8

    Google Scholar 

  139. S.-Y. Kim et al., in IEEE Int’l Reliability Physics Symp., 2005, p. 538

    Google Scholar 

  140. B.S. Doyle et al., IEEE Electron Device Lett. 24, 263 (2003)

    Article  ADS  CAS  Google Scholar 

  141. J.G. Fossum et al., IEEE Electron Device Lett. 24, 745 (2003)

    Article  ADS  CAS  Google Scholar 

  142. H.-S.P. Wong et al., in Int’l Electron Devices Meeting Technical Digest, 1998, p. 407

    Google Scholar 

  143. T. Numata, S. Takagi, IEEE Trans. Electron Devices 51, 2161 (2004)

    Article  ADS  CAS  Google Scholar 

  144. M. Ieong et al., in Proc. Conf. Simulation of Semiconductor Processes and Devices, 2000, p. 147

    Google Scholar 

  145. S.H. Tang et al., in Proc. Int’l Solid-State Circuits Conf., 2001, p. 118

    Google Scholar 

  146. I.Y. Yang et al., in Int’l Electron Devices Meeting Technical Digest, 1995, p. 877

    Google Scholar 

  147. F.-L. Yang et al., in Symp. VLSI Technology Digest, 2005, p. 16

    Google Scholar 

  148. D.M. Fried et al., in Device Research Conf. Digest, 2003, p. 45

    Google Scholar 

  149. D.M. Fried et al., IEEE Electron Device Lett. 24, 592 (2003)

    Article  ADS  CAS  Google Scholar 

  150. Y.X. Liu et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 986

    Google Scholar 

  151. L. Mathew et al., in IEEE Int’l SOI Conf. Digest., 2004, p. 187

    Google Scholar 

  152. S. Balasubramanian et al., in IEEE Int’l SOI Conf. Digest., 2004, p. 27

    Google Scholar 

  153. B. Doyle et al., IEEE Electron Device Lett., 16, 301 (1995)

    Article  ADS  CAS  Google Scholar 

  154. M. Togo et al., in Int’l Electron Devices Meeting Technical Digest, 1998, p. 347

    Google Scholar 

  155. Y.-C. King et al., in Int’l Electron Devices Meeting Technical Digest, 1998, p. 585

    Google Scholar 

  156. C. Kuo et al., IEEE Electron Device Lett. 23, 345 (2002)

    Article  ADS  CAS  Google Scholar 

  157. S. Okhonin et al., in IEEE Int’l SOI Conf. Digest. 2001, p. 153

    Google Scholar 

  158. T. Ohsawa et al., in Proc. Int’l Solid-State Circuits Conf. 2002, p. 152

    Google Scholar 

  159. J. Wang, M. Lundstrom, in Int’l Electron Devices Meeting Technical Digest, 2002, p. 707

    Google Scholar 

  160. W. Haensch et al., IBM J. Res. Develop. 50(4/5) (2006)

    Google Scholar 

  161. S. Balasubramanian et al., in Proc. IEEE Silicon Nanoelectronics Workshop, 2003, p. 16

    Google Scholar 

  162. J. Frei et al., IEEE Electron Device Lett. 25, 813 (2004)

    Article  ADS  CAS  Google Scholar 

  163. X. Sun et al., IEEE Electron Device Lett. 29, 491 (2008)

    Article  ADS  CAS  Google Scholar 

  164. S.E. Thompson, S. Parthasarathy, Mater. Today 9, 20 (2006)

    Article  CAS  Google Scholar 

  165. M. Chudzik et al., in Symp. VLSI Technology Digest, 2007, p. 194

    Google Scholar 

  166. G.D. Wilk et al., J. Appl. Phys. 89, 5243 (2001)

    Article  ADS  CAS  Google Scholar 

  167. B.H. Lee et al., Mater. Today 9, 32 (2006)

    Article  CAS  Google Scholar 

  168. L. Chang et al., in Int’l Electron Devices Meeting Technical Digest, 2001, p. 99

    Google Scholar 

  169. D. Ha et al., in Int’l Electron Devices Meeting Technical Digest, 2004, p. 643

    Google Scholar 

  170. J. Kavalieros et al., in Symp. VLSI Technology Digest, 2006, p. 62

    Google Scholar 

  171. C.-Y. Kang et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 885

    Google Scholar 

  172. M.J.H. van Dal et al., in Symp. VLSI Technology Digest, 2007, p. 110

    Google Scholar 

  173. D.L. Kencke et al., in Device Research Conf. Digest, 1999, p. 22

    Google Scholar 

  174. C. Hu, in Int’l Electron Devices Meeting Technical Digest, 1996, p. 319

    Google Scholar 

  175. K.J. Hubbard, D.G. Schlom, J. Mater. Res., 11, 2757 (1996)

    Article  ADS  CAS  Google Scholar 

  176. G.J. Hu, R.H. Bruce, IEEE Trans. Electron Devices 32, 584 (1985)

    Article  Google Scholar 

  177. Q. Lu et al., in Symp. VLSI Technology Digest, 2000, p. 72

    Google Scholar 

  178. A. Chatterjee et al., in Int’l Electron Devices Meeting Technical Digest, 1997, p. 821

    Google Scholar 

  179. H.-H. Vuong et al., IEEE Electron Device Lett. 21, 248 (2000)

    Article  ADS  CAS  Google Scholar 

  180. A. Yagishita et al. IEEE Trans. Electron Devices 47, 1028 (2000)

    Article  ADS  CAS  Google Scholar 

  181. D.M. Brown et al., Solid-State Electron. 11, 1105 (1968)

    Article  ADS  Google Scholar 

  182. P. Ranade et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 363

    Google Scholar 

  183. J.D. McBrayer et al., J. Electrochem. Soc. 133, 1242 (1986)

    Article  CAS  Google Scholar 

  184. T. Amazawa, H. Oikawa, J. Electrochem. Soc. 145, 1297 (1998)

    Article  CAS  Google Scholar 

  185. M. Kakumu et al., in Symp. VLSI Technology Digest, 1984, p. 30

    Google Scholar 

  186. M. Qin et al., J. Electrochem. Soc. 148, G271 (2001)

    Article  CAS  Google Scholar 

  187. Z. Krivokapic et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 445

    Google Scholar 

  188. Y. Yeo et al., in Symp. VLSI Technology Digest, 2001, p. 49

    Google Scholar 

  189. J. Schaeffer et al., in MRS Spring Meeting, 2004, Paper D4.1

    Google Scholar 

  190. C.S. Park et al., IEEE Electron Device Lett. 25, 372 (2004)

    Article  ADS  CAS  Google Scholar 

  191. S.-H. Kim, J.G. Fossum, IEEE Trans. Electron Devices 54, 1934 (2007)

    Article  ADS  CAS  Google Scholar 

  192. M. Lundstrom, IEEE Electron Device Lett., 18, 361 (1997)

    Article  ADS  CAS  Google Scholar 

  193. A. Kahkifirooz, D.A. Antoniadis, in Int’l Electron Devices Meeting Digest, 2006, p. 667

    Google Scholar 

  194. S.E. Thompson et al., IEEE Trans. Electron Devices 53, 1010 (2006)

    Article  ADS  CAS  Google Scholar 

  195. F. Ootsuka et al., in Int’l Electron Devices Meeting Technical Digest, 2000, p. 575

    Google Scholar 

  196. K. Ota et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 27

    Google Scholar 

  197. C.-H. Chen et al., in Symp. VLSI Technology Digest, 2004, p. 56

    Google Scholar 

  198. T. Ghani et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 978

    Google Scholar 

  199. K.W. Ang et al., in Int’l Electron Devices Meeting Technical Digest, 2004, p. 1069

    Google Scholar 

  200. C.-H Ge et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 73

    Google Scholar 

  201. J.L. Hoyt et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 23

    Google Scholar 

  202. M. Yang et al., IEEE Trans. Electron Devices 53, 965 (2006)

    Article  ADS  Google Scholar 

  203. W. Xiong et al., IEEE Electron Device Lett. 27, 612 (2006)

    Article  ADS  CAS  Google Scholar 

  204. K.-W. Ang et al., in Symp. VLSI Technology Digest, 2007, p. 42

    Google Scholar 

  205. N. Yasutake et al., in Symp. VLSI Technology Digest, 2007, p. 48

    Google Scholar 

  206. K. Uchida et al., in Int’l Electron Devices Meeting Technical Digest, 2004, p. 229

    Google Scholar 

  207. T. Irisawa et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 457

    Google Scholar 

  208. K.-W. Ang et al., IEEE Electron Device Lett. 28, 301 (2007)

    Article  ADS  CAS  Google Scholar 

  209. Int’l Electron Devices Meeting Digest, 2003, p. 26

    Google Scholar 

  210. P. Verheyen et al., in Symp. VLSI Technology Digest, 2005, p. 194

    Google Scholar 

  211. N. Collaert et al., in Symp. VLSI Technology Digest, 2006, p. 64

    Google Scholar 

  212. T.-Y. Liow et al., in Symp. VLSI Technology Digest, 2006, p. 68

    Google Scholar 

  213. T.P. Pearsall, J.C. Bean, IEEE Electron Device Lett. 7, 308 (1986)

    Article  ADS  Google Scholar 

  214. H. Daembkes et al., IEEE Trans. Electron Devices 33, 633 (1986)

    Article  ADS  Google Scholar 

  215. D. Nayak et al., IEEE Electron Device Lett. 12, 154 (1991)

    Article  ADS  Google Scholar 

  216. V.P. Kesan et al., in Int’l Electron Devices Meeting Technical Digest, 1991, p. 91

    Google Scholar 

  217. E. Murakami et al., IEEE Electron Device Lett. 12, 71 (1991)

    Article  ADS  CAS  Google Scholar 

  218. K. Ismail et al., IEEE Electron Device Lett. 13, 229 (1992)

    Article  ADS  CAS  Google Scholar 

  219. S. Verdonekt-Vandebroek et al., IEEE Trans. Electron Devices 41, 90 (1994)

    Article  ADS  Google Scholar 

  220. A.G. O’Neill, D.A. Antoniadis, IEEE Trans. Electron Devices 43, 911 (1996)

    Article  ADS  CAS  Google Scholar 

  221. T. Krishnamohan et al., in Symp. VLSI Technology Digest, 2005, p. 82

    Google Scholar 

  222. M. Lee et al., Appl. Phys. Lett. 79, 3344 (2001)

    Article  ADS  CAS  Google Scholar 

  223. C.O. Chui et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 437

    Google Scholar 

  224. H. Shang et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 441

    Google Scholar 

  225. T. Low et al., in Symp. VLSI Technology Digest, 2003, p. 117

    Google Scholar 

  226. C.H. Huang et al., in Symp. VLSI Technology Digest, 2003, p. 119

    Google Scholar 

  227. W.P. Bai et al., in Symp. VLSI Technology Digest, 2003, p. 121

    Google Scholar 

  228. M.L. Lee, E.A. Fitzgerald, in Int’l Electron Devices Meeting Technical Digest, 2003, p. 429

    Google Scholar 

  229. A. Ritenour et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 433

    Google Scholar 

  230. C.O. Chui et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 437

    Google Scholar 

  231. H. Shang et al., in Int’l Electron Devices Meeting Technical Digest, 2004, p. 157

    Google Scholar 

  232. S.J. Whang et al., in Int’l Electron Devices Meeting Technical Digest, 2004, p. 307

    Google Scholar 

  233. O. Weber et al., in Int’l Electron Devices Meeting Technical Digest, 2005, p. 137

    Google Scholar 

  234. H. Shang et al., IBM J. Res. Develop. 50 (4/5), 377 (2006)

    Article  CAS  Google Scholar 

  235. P. Zimmerman et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 655

    Google Scholar 

  236. T. Mimura, M. Fukuta, IEEE Trans. Electron Devices 27, 1147 (1980)

    Article  ADS  Google Scholar 

  237. F. Ren et al., Solid-State Electron. 41, 1751 (1997)

    Article  ADS  CAS  Google Scholar 

  238. J.-Y. Wu et al., IEEE Electron Device Lett. 20, 18 (1999)

    Article  ADS  Google Scholar 

  239. P.D. Ye et al., IEEE Electron Device Lett. 24, 209 (2003)

    Article  ADS  CAS  Google Scholar 

  240. P.D. Ye et al., Appl. Phys. Lett. 83, 180 (2003)

    Article  ADS  CAS  Google Scholar 

  241. I.J. Ok et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 829

    Google Scholar 

  242. F. Gao et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 833

    Google Scholar 

  243. K.C. Saraswat et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 659

    Google Scholar 

  244. A. Pethe et al., in Int’l Electron Devices Meeting Technical Digest, 2005, p. 605

    Google Scholar 

  245. C. Zhu, Int’l Conf. Solid-State and Integrated Circuit Technology, 2006, p. 128

    Google Scholar 

  246. J.W. Sleight et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 697

    Google Scholar 

  247. M. Tao et al., Appl. Phys. Lett. 83, 2593 (2003)

    Article  ADS  CAS  Google Scholar 

  248. A. Yagishita et al., in Ext. Abstracts of the Int’l Conf. on Solid-State Devices and Materials, 2003, p. 708

    Google Scholar 

  249. C.H. Ko et al., in Symp. VLSI Technology Digest, 2006, p. 98

    Google Scholar 

  250. T. Yamauchi et al., in Int’l Electron Devices Meeting Technical Digest, 2006, p. 385

    Google Scholar 

  251. A. Kinoshita et al., in Symp. VLSI Technology Digest, 2004, p. 168.

    Google Scholar 

  252. M. Zhang et al., in European Solid-State Device Research Conf., 2005, p. 457

    Google Scholar 

  253. Q. Wang et al., IEEE Trans. Electron Devices 39, 2486 (1992)

    Article  ADS  Google Scholar 

  254. B.-Y. Tsui et al., IEEE Trans. Electron Devices 52, 2455 (2005)

    Article  ADS  CAS  Google Scholar 

  255. R.A. Vega, T.J.K. Liu, IEEE Trans. Electron Devices 55 (2008)

    Google Scholar 

  256. M. Ozturk et al., in Int’l Electron Devices Meeting Technical Digest, 2003, p. 497

    Google Scholar 

  257. T.-J. King et al., IEEE Trans. Electron Devices 41, 228 (1994)

    Article  ADS  CAS  Google Scholar 

  258. S. Hanson et al., IBM J. Res. Develop. 50 (4/5), 469 (2006)

    Article  Google Scholar 

  259. K. Gopalakrishnan et al., in Int’l Electron Devices Meeting Technical Digest, 2002, p. 289

    Google Scholar 

  260. P.-F. Wang et al., Solid State Electron. 48, 2281 (2004)

    Article  ADS  CAS  Google Scholar 

  261. H. Kam et al., in Int’l Electron Devices Meeting Technical Digest, 2005, p. 463

    Google Scholar 

  262. W-Y. Choi et al., IEEE Electron Device Lett. 28, 743 (2007)

    Article  ADS  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. 42063 Benbow Drive, Fremont, CA, 94539, USA

    T. -J. K. Liu

  2. Design and Technology Solutions, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY, 10598, USA

    L. Chang

Authors
  1. T. -J. K. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. Chang
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. 2116 Cumberland Hill Drive, Henderson, NV, 89052, USA

    Howard R. Huff

Rights and permissions

Reprints and permissions

Copyright information

© 2009 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Liu, T.J.K., Chang, L. (2009). Transistor Scaling to the Limit. In: Huff, H.R. (eds) Into the Nano Era. Springer Series in Materials Science, vol 106. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74559-4_8

Download citation

Publish with us

Policies and ethics

Search

Navigation