Abstract
This chapter focuses on analytical modeling of short-channel single-gate SOI MESFETs. In the beginning, we review the existing models presented for this device and explain the drawbacks related to each one. After that, using a new technique for solving of Poisson’s equation in the conductive channel, we develop a modified two-dimensional analytical model for the device which is free of the problems associated with the previous models. By using the presented model, the subthreshold behavior of the device is displayed and discussed. Also, the impact of device parameters and bias conditions on the device performance is investigated.
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Amiri, I.S., Mohammadi, H., Hosseinghadiry, M. (2019). Modeling of Classical SOI MESFET. In: Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer, Cham. https://doi.org/10.1007/978-3-030-04513-5_3
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DOI: https://doi.org/10.1007/978-3-030-04513-5_3
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