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Polymer Field-Effect Transistors for Transport Property Studies

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Lower-Dimensional Systems and Molecular Electronics

Part of the book series: NATO ASI Series ((NSSB,volume 248))

Abstract

Thin film field-effect transistors have been prepared of poly(3-alkyl-thiophenes) by using spin-coating techniques. The devices are used in the determination of the charge carrier mobility μ, dc conductivity σ, and the carrier concentration p0. Poly(3-hexylthiophene) is characterized in a wide temperature range T = 130–430 k, and possible transport mechanisms are discussed.

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References

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Author information

Authors and Affiliations

  1. Semiconductor Laboratory, Technical Research Centre of Finland, Otakaari 7 B, SF-02150, Espoo, Finland

    J. Paloheimo, E. Punkka & H. Stubb

  2. Electron Physics Laboratory, Helsinki University of Technology, Otakaari 7 A, SF-02150, Espoo, Finland

    P. Kuivalainen

Authors
  1. J. Paloheimo
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  2. E. Punkka
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  3. H. Stubb
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  4. P. Kuivalainen
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Editor information

Editors and Affiliations

  1. The University of Alabama, Tuscaloosa, Alabama, USA

    Robert M. Metzger

  2. Institut Laue-Langevin, Grenoble, France

    Peter Day

  3. National Hellenic Research Foundation, Athens, Greece

    George C. Papavassiliou

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© 1990 Springer Science+Business Media New York

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Paloheimo, J., Punkka, E., Stubb, H., Kuivalainen, P. (1990). Polymer Field-Effect Transistors for Transport Property Studies. In: Metzger, R.M., Day, P., Papavassiliou, G.C. (eds) Lower-Dimensional Systems and Molecular Electronics. NATO ASI Series, vol 248. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2088-1_74

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  • DOI: https://doi.org/10.1007/978-1-4899-2088-1_74

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-2090-4

  • Online ISBN: 978-1-4899-2088-1

  • eBook Packages: Springer Book Archive

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