Abstract
X-ray photoelectron spectroscopy (XPS), also known as electron spectroscopy for chemical analysis (ESCA), and Auger electron spectroscopy (AES) are widely used materials characterization techniques belonging to the general class of methods referred to as surface analysis. These non-destructive techniques provide, to varying degrees, semi-quantitative elemental, chemical-state and electronic-structure information from the top 10 nm of a material and are sensitive to elements Li and above. XPS and Auger have both found applications over a vast range of material classes; such as metallic, ceramic, polymeric, and composite; and technologies such as microelectronics, solar energy, and nanotechnology. Modern spectrometers are now not only capable of achieving high-energy resolution spectroscopy, but are also capable of 2-dimensional imaging.
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Röntgen W 1901 Nobel Prize in physics. “In recognition of the extraordinary services he has rendered by the discovery of the remarkable rays subsequently named after him”
Hertz H (1887) Über einen Einfluss des ultravioletten Lichtes auf die electrische Entladung. Ann Physik 267:983. The IEEE Heinrich Hertz Medal was established by the Board of Directors in 1987 “for outstanding achievements in Hertzian (radio) waves”
Einstein A (1905) Über einen die Erzeugung und Verwandlung des Lichtes betreffenden heuristischen Gesichtspunkt. Ann Physik 17:132. 1921 Nobel Prize in Physics “for his services to Theoretical Physics, and especially for his discovery of the law of the photoelectric effect”
Siegbahn K (1967) Vetenskaps-Societeten: Esca; Atomic molecular and solid state structure by means of electronspectroscopy. Nova Acta Regiae Soc Sci Ser IV 20. 1981 Nobel Prize in Physics “for his contribution to the development of high resolution electron spectroscopy”
Kittel C, Kroemer H (1980) Thermal physics, 2nd edn. W. H. Freeman, New York
Bain CD, Whitesides GM (1989) Attenuation lengths of photoelectrons in hydrocarbon films. J Phys Chem 93:1670
Tougaard S, Sigmund P (1982) Influence of elastic and inelastic scattering on energy spectra of electrons emitted from solids. Phys Rev B 25:4452
Tanuma S, Powell CJ, Penn DR (1991) Calculations of electron inelastic mean free paths II. Data for 27 elements over the 50-2000 eV range. Surf Interface Anal 17:911
Tanuma S, Powell CJ, Penn DR (1993) Calculations of electron inelastic mean free paths V. Data for 14 organic compounds over the 50-2000 eV range. Surf Interface Anal 21:165
Tanuma S, Powell CJ, Penn DR (2004) Calculations of electron inelastic mean free paths VIII. Data for 15 elements over the 50-2000 eV range. Surf Interface Anal 36:1
Moulder JF, Stickle WF, Sobol PE, Bomben KD (1995) In: Chastain J, King RC Jr (eds) Handbook of x-ray photoelectron spectroscopy. Physical Electronics, Eden Prairie
Haasch RT, Lee T-Y, Gall D, Greene JE, Petrov I (2000) Epitaxial ScN(001) grown and analyzed in situ by XPS and UPS. I analysis of As-deposited layers. Surf Sci Spectra 7:169
Haasch RT, Lee T-Y, Gall D, Greene JE, Petrov I (2000) Epitaxial TiN(001) grown and analyzed in situ by XPS and UPS. I analysis of As-deposited layers. Surf Sci Spectra 7:193
Haasch RT, Lee T-Y, Gall D, Greene JE, Petrov I (2000) Epitaxial VN(001) grown and analyzed in situ by XPS and UPS. I analysis of As-deposited layers. Surf Sci Spectra 7:221
Haasch RT, Lee T-Y, Gall D, Greene JE, Petrov I (2000) Epitaxial CrN(001) grown and analyzed in situ by XPS and UPS. I analysis of As-deposited layers. Surf Sci Spectra 7:250
Patscheider J, Hellgren N, Haasch RT, Petrov I, Greene JE (2011) Electronic structure of the SiNx/TiN interface: a model system for superhard nanocomposites. Phys Rev B 83:125124
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE (2012) The Si3N4 interface: an introduction to a series of ultrathin films grown and analyzed in situ using x-ray photoelectron spectroscopy. Surf Sci Spectra 19:30
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE (2012) The Si3N4 interface: 1. TiN(001) grown and analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. Surf Sci Spectra 19:33
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE (2012) The Si3N4 interface: 2. Si3N4/TiN(001) grown with a -7 V substrate bias and analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. Surf Sci Spectra 19:42
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE (2012) The Si3N4 interface: 3. Si3N4/TiN(001) grown with a -150 V substrate bias and analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. Surf Sci Spectra 19:52
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE (2012) The Si3N4 interface: 4. Si3N4/TiN(001) grown with a -250 V substrate bias and analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. Surf Sci Spectra 19:62
Gall D, Städele M, Järrendahl K, Petrov I, Desjardins P, Haasch RT, Lee T-Y, Greene JE (2001) Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations. Phys Rev B 63:125119
Gall D, Shin C-S, Haasch RT, Petrov I, Greene JE (2002) Band gap in epitaxial NaCl-structure CrN(001) layers. J Appl Phys 91:5882
Haasch RT, Lee T-Y, Gall D, Greene JE, Petrov I (2000) Epitaxial ScN(001) grown and analyzed in situ by XPS and UPS. II. Analysis of Ar+ sputter etched layers. Surf Sci Spectra 7:178
Haasch RT, Lee T-Y, Gall D, Greene JE, Petrov I (2000) Epitaxial TiN(001) grown and analyzed in situ by XPS and UPS. II. Analysis of Ar+ sputter etched layers. Surf Sci Spectra 7:204
Haasch RT, Lee T-Y, Gall D, Greene JE, Petrov I (2000) Epitaxial VN(001) grown and analyzed in situ by XPS and UPS. II. Analysis of Ar+ sputter etched layers. Surf Sci Spectra 7:233
Haasch RT, Lee T-Y, Gall D, Greene JE, Petrov I (2000) Epitaxial CrN(001) grown and analyzed in situ by XPS and UPS. II. Analysis of Ar+ sputter etched layers. Surf Sci Spectra 7:262
Unarunotai S, Koepke JC, Tsai C-L, Du F, Chialvo CE, Murata Y, Haasch R, Petrov I, Mason N, Shim M, Lyding J, Rogers JA (2010) Layer-by-layer transfer of multiple, large area sheets of graphene grown in multilayer stacks on a single SiC wafer. ACS Nano 4:5591
Porte L, Roux L, Hanus J (1983) Vacancy effects in the x-ray photoelectron spectra of TiNx. Phys Rev B 28:3214
Harada Y, Li X, Bohn PW, Nuzzo RG (2001) Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays. J Am Chem Soc 123:8709
Meitner L (1922) Über die Entstehung der β-Strahl-Spektren radioaktiver Substanzen. Z Physik 9:131
Auger P (1925) Sur l’effet photoélectrique compose. J Phys Radium 6:205
Lander JJ (1953) Auger peaks in the energy spectra of secondary electrons from various materials. Phys Rev 91:1382
Stein DF (1988) The historical development of Auger electron spectroscopy. In: Briant CL, Messmer RP (eds) Treatise on materials science and technology, vol 30, Auger electron spectroscopy. Acedemic, San Diego, pp 1–15
Harris LA (1967) Analysis of materials by electron-excited Auger electrons. J Appl Phys 39:1419
Palmberg PW, Bohn GK, Tracy JC (1969) High sensitivity Auger electron spectrometer. Appl Phys Lett 15:254
Finnegan N, Lee T-Y, Haasch RT, Greene JE, Petrov I (2000) Epitaxial ScN(001) grown and analyzed in situ by AES after (1) deposition and (2) Ar+ sputter etching. Surf Sci Spectra 7:185
Finnegan N, Lee T-Y, Haasch RT, Greene JE, Petrov I (2000) Epitaxial TiN(001) grown and analyzed in situ by AES after (1) deposition and (2) Ar+ sputter etching. Surf Sci Spectra 7:213
Finnegan N, Lee T-Y, Haasch RT, Greene JE, Petrov I (2000) Epitaxial VN(001) grown and analyzed in situ by AES after (1) deposition and (2) Ar+ sputter etching. Surf Sci Spectra 7:242
Finnegan N, Lee T-Y, Haasch RT, Greene JE, Petrov I (2000) Epitaxial CrN(001) grown and analyzed in situ by AES after (1) deposition and (2) Ar+ sputter etching. Surf Sci Spectra 7:262
Houston JE, Rye RR (1988) Local electronic structure information in Auger electron spectroscopy: solid surfaces. In: Briant CL, Messmer RP (eds) Treatise on materials science and technology, vol 30, Auger electron spectroscopy. Acedemic, San Diego, pp 65–110
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Haasch, R.T. (2014). X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). In: Sardela, M. (eds) Practical Materials Characterization. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-9281-8_3
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DOI: https://doi.org/10.1007/978-1-4614-9281-8_3
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