Abstract
Lithography is a key element in a cadre of planar processing methods used in advanced semiconductor manufacturing. Technology sectors, such as integrated circuits, flat panel displays, optoelectronic components, and advanced electronic packaging, all especially rely on it. Lithography as discussed in this chapter is used to pattern layered materials and is akin to the photographic process. In photography an imaging system is used to record an image in a silver-containing emulsion. In conventional lithography the emulsion is replaced by a thin radiation sensitive layer, usually a polymer, known as a resist. A pattern of radiation exposes the resist in order to alter its solubility in a chemical developer. The process relies on the highly non-linear response of the resist to produce well defined patterns after development.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Broers A.N., et al, Appl Phys. Lett. 29, 596 (1976)
Howard R.E., et al., Appl Phys. Lett. 36, 598 (1980)
Beaumont S.P., et al, Appl Phys. Lett. 38, 436 (1981)
Lee K.L., and Ahmed H., J Vac. Sci. Technol. 19, 946 (1981)
Dagata J.A., et al, Appl Phys. Lett. 56, 2001 (1990)
Snow E.S., Campbell P.M., and McCarr P.J., Appl Phys. Lett. 63, 749 (1993)
Snow E.S., and Campbell P.M., Appl Phys. Lett. 64, 1932 (1994)
Smith H.I., et al, Microelectronics Engineering, “Special Issue on Nanotechnology”, to be published
A number of individual cases were calculated for the various lithography methodslisted, then generous shaded figures were drawn to include those sets of points. The power law fit was performed using the individually plotted points.
Smith H.I., J. Vac. ScL Technol. B 4, 148 (1986)
Hector S.D., and Smith H.I., OSA Proceedings on SXPL, Hawryluk A.M., and Stuhlen R.H., eds., 18, 202 (1993)
For an assessment of various electron proximity correction methods see: Owen G., J. Vac. Sci. Technol B 8, 1889 (1990)
Goldstein J.I., et al, Practical Scanning Electron Microscopy, Goldstein J.I., and Yakowitz H., eds., New York: Plenum Press, 1977, pp. 21–47
Wilson R.G., and Brewer G.R., Ion Beams with Applications to Ion Implantation, Huntington, NY: Krieger Publishing Company, (1979), pp.129–260
Kyser D.F. J. Vac. Sci. Technol. B 1, 1391 (1983)
Howard R.E., et al, J. Vac. Sci. Technol. B 1, 1101 (1983)
Tennant D.M., et al, J. Vac. Sci. Technol. B 12, 3689 (1994)
Chapman B., “Glow Discharge Processes”, John Wiley & Sons, (1980), (especially Chapters 5 and 7)
Yan R.H., et al, IEEE Elec. Dev. Lett., 13, 256–258 (1992)
Fiegna C, et al., IEEE Trans. Electron Dev. 41, 941–950 (1994)
Ono M., et al., J. Vac. Sci. Tech B 13, 1740 (1995)
Eugster C.C., Nuytkens P.R., and del Alamo J.A., IEEE IEDM Tech. Digest 495–499 (1992)
Tiwari S., and Woodall J.M., Appl. Phys. Lett. 64, 2211 (1994)
Tiwari S., et al., Tech. Dig. IEDM 1992 859 (1992)
Simhony S., et al., Appl. Phys. Lett. 59, 2225 (1991)
Tsukamoto S., et al. Appl. Phys. Lett. 63, 355 (1993)
Tsuchiya M., et al. Phys. Rev. Lett. 62, 466 (1989)
Weisbuch C, and Vinter B., Quantum Semiconductor Structures, San Diego: Academic Press (1991)
Ferrera J., et al., J. Vac. Sci. Technol. B 11, 2342 (1993)
Hawryluk A.M., Smith H.I., Ehrlich D.J., J. Vac. Sci. Technoi B 1, 1200 (1983)
Kirz J., J. Opt. Soc. Am. 64, 301–309 (1974)
Anderson E.H., and Kern D., in X-Ray Microscopy III, Michette A., Morrison G., and Buckley C, eds., Berlin: Sringer-Verlag (1992)
Thieme J., et al., “X-Ray Optics and Microanalysis” Inst. of Physics Conf. Ser. 130, Bristol, 1993, 527–530
Tennant D.M., et al., Optics Lett. 16, 621 (1991)
Tennant D.M., et al., J. Vac. Sci. Technol. B 6, 1970 (1990)
Thieme J., et al., in X-Ray Microscopy IV, Erko A.I., and Aristov V.V., eds., Bogorodski Pechantnik: Chernogolvka (1995)
Windt D.L., private communication
Hartley J., Groves T., and Pfeiffer H., J. Vac. Sci. Technoi B 9, 3015 (1991)
Pfeiffer H.C., et al., J. Vac. Sci. Technol. B 11, 2332 (1993)
Chou S.Y., Smith H.I., and Antoniadis D.A., J. Vac. Sci. Technol. B 3, 1587 (1985)
Chou S.Y. Sith H.I. and Antoniadis D.A. J. Vac. Sci. Techl. B 40 253 1986
Flanders D.C., Appl. Phys. Lett. 36, 93 (1980)
Liddle J.A., J. Vac. Sci. Technoi B 9, 3003 (1991)
Mauger P.E., et al., J. Vac. Sci. Technol. B 10, 2819 (1992)
Tennant D.M., et al., J. Vac. Sci. Technol. B 8, 1975 (1990)
MacDowell A.A., et al., J. Vac. Sci. Technol. B 9, 3193 (1991)
“The National Technology Roadmap for Semiconductors ”, San Jose: The Semiconductor Industry Association (1994)
Tiberio R.C., et al., J. Vac. Sci. Technol B 9, 2842 (1991)
Zah C.E., et al. Electron. Lett. 25, 650 (1989)
Tennant D.M., et al., J. Vac. Sci. Technol. B 10, 2530 (1992)
Kjellberg T., Schatz R., J. Lightwave Technol. 10, 1256 (1992)
Tennant D.M., et al., J. Vac Sci Technol. B 11, 2509 (1993)
Levenson M.D., Japan. J. Appl. Phys. 33, 6765 (1994)
Hattori K., et al., J. Vac. Sci. Technol. B 11, 2346 (1993)
Nakayama Y., Okazaki S., and Saitou N., J. Vac. Sci. Technol. B 8, 1836 (1990)
Heritage M.B., J. Vac. Sci. Technol. 12, 1135 (1975)
Frosien J., Lischke B., and Anger K., J. Vac. Sci. Technol. 16, 1827 (1979)
Nakasuji, Suzuki and Shimizu, Rev. Sci. Inst. 64, 446 (1993)
Berger S., et al., Proc. SPIE 2322, 434 (1994)
Koops H.W.P. and Grob J., Springer Series in Optical Sciences: X-ray Microscopy 43, Berlin: Springer-Verlag, 1984
Heuberger A., J. Vac Sci Technol. B 6, 107 (1988)
Warlaumont J., J. Vac Sci Technol. B 7, 1634 (1989)
Fay B., in Microcircuit Engineering, Ahmed H., and Nixon W.C., eds., Cambridge: Cambridge University Press, 1980, 323–353
Early K., Schattenburg M.L, and Smith H.I., Microelectron. Eng. 11, 317 (1990)
Archie C.N., et al., J. Vac. Sci. Technol. B 10, 3224 (1992)
Frackoviak J., et al., J. Vac Sci Technol. B 9, 3198 (1991)
Stengl G., et al., J. Vac Sci Technol. 16, 1883 (1979)
Finkelstein W., and Mondelli A. A., Semiconductor International 55, (1995)
Brunger W.H., et al., Microelectronic Eng. 27, 323–326 (1995)
Kinoshita H., et al., J. Vac Sci Technol. B 7, 1648 (1989)
Bjorkholm J.E., et al., J. Vac. Sci. Technol. B 8, 1509 (1990)
Kubiak G.D., et al., J. Vac. Sci. Technol. B 12, 3820 (1994)
Hawryluk A.M., et al., Proc. OSA 12, 45 (1991)
Tennant D.M., et al., Appl. Optics 32, 7007 (1993)
Ngyugen K.G., et al., J. Vac. Sci. Technol. B 12, 3833 (1994)
Koek B.H., et al., J. Vac. Sci. Technol. B 12, 3409 (1994)
McCord M.A., et al., J. Vac. Sci. Technol. B 10, 2764 (1992)
Thorns S., Beaumont S.P., and Wilkinson C.D.W., J. Vac. Sci. Technol. B 7, 1823 (1989)
Hiroshima H., et al., J. Vac. Sci. Technol. B 13, 2514 (1995)
Wilbertz C, et al.., Nuclear Instrum. & Methods in Phys. Section B 63, Issue 1-2, 120 (1992)
Harriott L.R., J. Vac. Sci. Technol. B 11, 2200 (1993)
Binnig B., et al., Phys. Rev. Lett. 49, 47 (1982)
Minne S.C., Manalis S.R., and Quate C.F., Appl. Phys. Lett. 67, 3918 (1995)
Zhang Z.L., and MacDonald N.C., J. Vac. Sci. Technol. B 11, 2538 (1993)
Chang T.H.P., et al.., SPIE 10, 127(1993)
Kratschmer E., et al.., J. Vac. Sci. Technol. B 13, 2498 (1995)
MacDonald N.C., Chapter 3, this volume
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1999 Springer Science+Business Media New York
About this chapter
Cite this chapter
Tennant, D.M. (1999). Limits of Conventional Lithography. In: Timp, G. (eds) Nanotechnology. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-0531-9_4
Download citation
DOI: https://doi.org/10.1007/978-1-4612-0531-9_4
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4612-6805-5
Online ISBN: 978-1-4612-0531-9
eBook Packages: Springer Book Archive