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HEMT Modelling

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Compound Semiconductor Device Modelling

Abstract

The High Electron Mobility Transistor (HEMT) is a contender for the coveted place as the fastest solid state device, even though this claim is being challenged from time to time by MESFET technology (see Feng et al. 1990). This prominence has caused a great deal of activity in the area of HEMT modeling. HEMTs (which are also called HFETs — for Heterostructure Field Effect Transistors or MODFETs — for Modulation Doped Field Effect Transistors, or even TEGFETs — for Two-dimensional Electron Gas Field Effect Transistors) have been modeled at different levels — from advanced (relying primarily on self-consistent Monte Carlo simulations), to intermediate (utilizing the numerical solutions of phenomenological semiconductor equations), to analytical or semi-analytical (based on the calculation of the drift current and the total sheet charge in the HEMT channel.) These models of varying degrees of sophistication have different applications. Self-consistent Monte Carlo models are indispensable for revealing the device physics and verifying novel device concepts and ideas (see Hess and Kizilyalli 1986, and Jensen et al. 1991). Two-dimensional HEMT simulators can be used to optimize the device design and fine tune the HEMT fabrication process (e.g., PRIZM 1991). The analytical or semi-analytical HEMT models help understand the device operation, are suitable for engineering design, and are used in modern circuit simulator such as AIM-Spice (see Lee at al. 1993). In this Chapter, we will primarily consider analytical models suitable for circuit simulators, but we will also discuss more sophisticated techniques, such as full two-dimesional simulation and Monte Carlo technique. Quasi two-dimensional models are considered in other Chapters of this book.

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Author information

Authors and Affiliations

  1. University of Virginia, USA

    Michael Shur

  2. University of Trondheim, Norway

    Tor A. Fjeldly

Authors
  1. Michael Shur
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  2. Tor A. Fjeldly
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Editor information

Editors and Affiliations

  1. Microwave Solid State Group, Department of Electronic and Electrical Engineering, University of Leeds, LS2 9JT, Leeds, UK

    Christopher M. Snowden BSc, MSc, PhD, CEng, MIEE, Sen. Mem. IEEE  & Robert E. Miles BSc, ARCS, PhD, CEng, MIEE, MIEEE  & 

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© 1993 Springer-Verlag London Limited

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Shur, M., Fjeldly, T.A. (1993). HEMT Modelling. In: Snowden, C.M., Miles, R.E. (eds) Compound Semiconductor Device Modelling. Springer, London. https://doi.org/10.1007/978-1-4471-2048-3_3

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  • DOI: https://doi.org/10.1007/978-1-4471-2048-3_3

  • Publisher Name: Springer, London

  • Print ISBN: 978-1-4471-2050-6

  • Online ISBN: 978-1-4471-2048-3

  • eBook Packages: Springer Book Archive

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