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Bimberg D, Grundmann M, Ledentsov NN (1999) Quantum Dot Heterostructures. John Wiley and Sons, Chichester
Stranski IN, Krastanow L (1938) Zur Theorie der orientierten Abscheidung von Ionenkristallen aufeinander. Sitzungsberichte der Akademie der Wissenschaften in Wien, Mathematisch-Naturwissenschaftliche Klasse, Abt. IIb, 146(1–10): 797
Nötzel R, Ploog KH (2001) MBE of quantum wires and quantum dots. J. Cryst. Growth 227–228:8–12
Kim HJ, Park YJ, Park YM, Kim EK, Kim TW (2001) Fabrication of wirelike InAs quantum dots on 2°-off GaAs (100) substrates by changing the thickness of the InAs layer. Appl. Phys. Lett. 78:3253–3255
Leon Leon R, Chaparro S, Johnson SR, Navarro C, Jin X, Zhang YH, Siegert J, Marcinkevicius S, Liao XZ, Zou J (2002) Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties. J. Appl. Phys. 91:5826–5830
Bhat R, Kapon E, Hwang DM, Koza MA, Yun CP (1988) Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers. J. Cryst. Growth 93:850–856
Gerardot BD, Subramanian G, Minvielle S, Lee H, Johnson JA, Schoenfeld WV, Pine D, Speck JS, Petroff PM (2002) Self-assembling quantum dot lattices through nucleation site engineering. J. Cryst. Growth 236:647–654
Songmuang R, Kiravittaya. S, Schmidt OG (2003) Formation of lateral quantum dot molecules around self-assembled nanoholes. Appl. Phys. Lett. 82: 2892–2894
Schedelbeck G, Wegscheider W, Bichler M, Abstreiter G (1997) Coupled quantum dots fabricated by cleaved edge overgrowth: From artificial atoms to molecules. Science 278:1792–1795
Wegscheider W (2005) Cleaved Edge Overgrowth, T-Shaped Quantum Wires and Dots. In: Bryant GW, Solomon GS (eds) Optics of Quantum Dots and Wires. Artech House, Boston, pp 271–314
Pfeiffer L, West KW, Stormer HL, Eisenstein JP, Baldwin KW, Gershoni D, Spector J (1990) Formation of high quality two-dimensional electron gas on cleaved GaAs. Appl. Phys. Lett. 56:1697–1699
Belk JG, Sudijono JL, Zhang XM, Neave JH, Jones TS, Joyce BA (1997) Surface contrast in two dimensionally nucleated misfit dislocations in InAs/GaAs(110) heteroepitaxy. Phys. Rev. Lett. 78:475–478
Belk JG, Pashley DW, McConville CF, Joyce BA, Jones TS (1998) Surface morphology during strain relaxation in the growth of InAs on GaAs(110). Surf. Sc. 410:82–98
Joyce BA, Jones TS, Belk JG (1998) Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Twodimensional versus three-dimensional growth and strain relaxation. J. Vac. Sci. Technol. B, 16:2373–2380
Wasserman D, Lyon SA (2004) Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs. Appl. Phys. Lett. 85:5352–5354
Zhao C, Chen YH, Cui CX, Xu B, Sun J, Lei W, Lu LK, Wang ZG (2005) Quantum-dot growth simulation on periodic stress of substrate. J. Chem. Phys. 123:094708–094711
Yoshita M, Oh JW, Akiyama H, Pfeiffer LN, West KW (2003) Control of MBE surface step-edge kinetics to make an atomically smooth quantum well. J. Cryst. Gr. 251:62–67
Shchukin VA, Ledentsov NN, Bimberg D (2004) Epitaxy of nanostructures, Springer-Verlag, Berlin
Ballet P, Smathers JB, Yang H, Workman CL, Salamo GJ (2001) Control of size and density of InAs/(Al,Ga)As self-organized islands. J. Appl. Phys. 90:481–487
Lobo C, Leon R (1998) InGaAs island shapes and adatom migration behavior on (100), (110), (111), and (311) GaAs surfaces. J. Appl. Phys. 83, 4168–4172
Bauer J, Schuh D, Uccelli E, Schulz R, Kress A, Hofbauer F, Finley JJ, Abstreiter G (2004) Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs. Appl. Phys. Lett. 85:4750–4752
Gustafsson A, Pistol ME, Montelius L, Samuelson L (1998) Local probe techniques for luminescence studies of low-dimensional semiconductor structures. J. Appl. Phys. 84:1715–1775
Pavesi L, Guzzi M (1994) Photoluminescence of AlxGa1 - xAs alloys. J. Appl. Phys.75:4779–4842
Schuh D, Bauer J, Uccelli E, Schulz R, Kress A, Hofbauer F, Finley JJ, Abstreiter G (2005) Controlled positioning of self-assembled InAs quantum dots on (110) GaAs. Physica E 26:72–75
Costantini G, Manzano C, Songmuang R, Schmidt OG, Kern K (2003) InAs/GaAs (001) quantum dots close to thermodynamic equilibrium. Appl. Phys. Lett. 82:3194–3196
Yang T, Tatebayashi J, Tsukamoto S, Nishioka M, Arakawa Y (2004) Narrow photoluminescence linewidth (17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition. Appl. Phys. Lett. 84:2817–2819
Bayer M, Ortner G, Stern O, Kuther A, Gorbunov AA, Forchel A, Hawrylak P, Fafard S, Hinzer K, Reinecke TL, Walck SN, Reithmaier JP, Klopf F, Schäfer F (2002) Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots. Phys. Rev. B 65:195315–195337
Brunner K, Abstreiter G, Böhm G, Tränkle G, Weimann G (1994) Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure. Phys. Rev. Lett. 73:1138–1141
Findeis F, Zrenner A, Böhm G, Abstreiter G (2000) Optical spectroscopy on a single InGaAs/GaAs quantum dot in the few-exciton limit. Solid State Comm. 114:227–230
Kapteyn CMA, Lion M, Heitz R, Bimberg D, Brunkov PN, Volovik BV, Konnikov SG, Kovsh AR, Ustinov VM (2000) Room-temperature 1.3 mm emission from InAs quantum dots grown by metal organic chemical vapor deposition. Appl. Phys. Lett. 76:1573–1575
Chu L, Zrenner A, Bichler M, Böhm G, Abstreiter G (2001) Intersubband photocurrent spectroscopy on self-assembled In(Ga)As/GaAs quantum dots. Phys. Stat. Sol. (b) 224:591–594
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Uccelli, E. et al. (2008). Self-assembly of InAs Quantum Dot Structures on Cleaved Facets. In: Wang, Z.M. (eds) Self-Assembled Quantum Dots. Lecture Notes in Nanoscale Science and Technology, vol 1. Springer, New York, NY. https://doi.org/10.1007/978-0-387-74191-8_2
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DOI: https://doi.org/10.1007/978-0-387-74191-8_2
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